Electrometry on charge traps with a single-electron transistor

Details Electrometry on charge traps with a single-electron transistor Electrometry on charge traps with a single-electron transistor

2002-12-09

arxiv.org/abs/cond-mat/0212184v1

Phys. Rev. B 67, 205313 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.67.205313

Background charge fluctuators are studied individually by means of a modified single-electron pump. Operation of the device in a feedback mode allows electrometric sensing of the charged background and its behavior upon electric potential variations due to geometrically different gates. Pulse height spectra and hysteresis of charge trapping transitions are discussed as a specific signature of distinct fluctuators. The location of individual traps is determined from the experimental data and based on electrostatic calculations.

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