Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

Details Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

2010-07-06

arxiv.org/abs/1007.1010v2

Phys. Rev. B 82, 121308(R) (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures; Improved analysis of data in Fig. 3, corrected factors of 2 and pi

Scientific paper

10.1103/PhysRevB.82.121308

We present measurements of electromagnetically induced transparency with an ensemble of donor- bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron spin dephasing time T* \approx 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also observe signatures of dynamical nuclear polarization, but find these effects to be much weaker than in experiments that use electron spin resonance and related experiments with quantum dots.

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