Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

Details Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

2007-09-08

arxiv.org/abs/0709.1174v1

Nature Nanotechnology 3, 210 - 215 (01 Apr 2008)

Physics

Condensed Matter

Materials Science

7 pages, 8 figures

Scientific paper

10.1038/nnano.2008.67

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at $\Gamma$. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.

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