Electrochemical integration of graphene with light absorbing copper-based thin films

Details Electrochemical integration of graphene with light absorbing copper-based thin films Electrochemical integration of graphene with light absorbing copper-based thin films

2012-03-26

arxiv.org/abs/1203.5655v1

J. Phys. Chem. C, 2012, 116 (1), pp 1200-1204

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/jp208120u

We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of Cu_{x}S films is presented. Current-voltage characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other.

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