Electrically tunable g-factors in quantum dot molecular spin states

Details Electrically tunable g-factors in quantum dot molecular spin states Electrically tunable g-factors in quantum dot molecular spin states

2006-08-08

arxiv.org/abs/cond-mat/0608198v2

Physics

Condensed Matter

Materials Science

5 pages, 5 figures, Accepted by Phys. Rev. Lett. New version reflects response to referee comments

Scientific paper

10.1103/PhysRevLett.97.197202

We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.

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