Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

Details Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

2006-05-22

arxiv.org/abs/cond-mat/0605516v1

Applied Physics Letters 89, 182115 (2006)

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

10.1063/1.2358928

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.

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