Electrically detected electron spin resonance in a high mobility silicon quantum well

Details Electrically detected electron spin resonance in a high mobility silicon quantum well Electrically detected electron spin resonance in a high mobility silicon quantum well

2005-12-02

arxiv.org/abs/cond-mat/0512041v4

Physical Review Letters 97, 066602 (2006).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to be published in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.97.066602

The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T_1.

Affiliated with

Also associated with

No associations

Rating

Electrically detected electron spin resonance in a high mobility silicon quantum well does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electrically detected electron spin resonance in a high mobility silicon quantum well, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically detected electron spin resonance in a high mobility silicon quantum well will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-529398