Electrical transport properties of polar heterointerface between KTaO3 and SrTiO3

Details Electrical transport properties of polar heterointerface between KTaO3 and SrTiO3 Electrical transport properties of polar heterointerface between KTaO3 and SrTiO3

2007-04-09

arxiv.org/abs/0704.1050v1

Physics

Condensed Matter

Materials Science

6 pages, 3 figures

Scientific paper

Electrical transport of a polar heterointerface between two insulating perovskites, KTaO3 and SrTiO3, is studied. It is formed between a thin KTaO3 film deposited on a top of TiO2- terminated (100) SrTiO3 substrate. The resulting (KO)1-(TiO2)0 heterointerface is expected to be hole-doped according to formal valences of K (1+) and Ti (4+). We observed electrical conductivity and mobility in the KTaO3/SrTiO3 similar to values measured earlier in electron-doped LaAlO3/SrTiO3 heterointerfaces. However, the sign of the charge carriers in KTaO3/SrTiO3 obtained from the Hall measurements is negative. The result is an important clue to the true origin of the doping at perovskite oxide hetero-interfaces.

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