Electrical transport in suspended and double gated trilayer graphene

Details Electrical transport in suspended and double gated trilayer graphene Electrical transport in suspended and double gated trilayer graphene

2011-12-13

arxiv.org/abs/1112.2985v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in Applied Physics Letters. Typos corrected and references updated

Scientific paper

We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnetic fields as low as 500mT.

Affiliated with

Also associated with

No associations

Rating

Electrical transport in suspended and double gated trilayer graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electrical transport in suspended and double gated trilayer graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical transport in suspended and double gated trilayer graphene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-490075