Electrical Transport in High Quality Graphene pnp Junctions

Details Electrical Transport in High Quality Graphene pnp Junctions Electrical Transport in High Quality Graphene pnp Junctions

2009-07-20

arxiv.org/abs/0907.3366v1

New Journal of Physics, 11, 095008 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in a special focus issue in New Journal of Physics

Scientific paper

10.1088/1367-2630/11/9/095008

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device.

Affiliated with

Also associated with

No associations

Rating

Electrical Transport in High Quality Graphene pnp Junctions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electrical Transport in High Quality Graphene pnp Junctions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical Transport in High Quality Graphene pnp Junctions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-696154