Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

Details Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

2009-12-11

arxiv.org/abs/0912.2218v1

Appl. Phys. Lett. 96, 082114 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 3 figures

Scientific paper

10.1063/1.3334730

Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a doping effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as has been found for lithographically contacted flakes. Finally, we demonstrate a current induced closing of the previously found phonon gap appearing in scanning tunneling spectroscopy experiments, strongly non-linear features at higher bias probably caused by vibrations of the flake and a B-field induced double peak attributed to the 0.Landau level of graphene.

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