Electrical Spin Pumping of Quantum Dots at Room Temperature

Details Electrical Spin Pumping of Quantum Dots at Room Temperature Electrical Spin Pumping of Quantum Dots at Room Temperature

2005-01-31

arxiv.org/abs/cond-mat/0501759v1

Physics

Condensed Matter

Materials Science

4 figures, accepted by Appl. Phys. Lett

Scientific paper

10.1063/1.1890469

We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices.

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