Electrical spin injection into p-doped quantum dots through a tunnel barrier

Details Electrical spin injection into p-doped quantum dots through a tunnel barrier Electrical spin injection into p-doped quantum dots through a tunnel barrier

2006-10-16

arxiv.org/abs/cond-mat/0610424v2

Appl. Phys. Lett., 87, 252115 (2005)

Physics

Condensed Matter

Other Condensed Matter

6 pages, 4 figures

Scientific paper

10.1063/1.2709889

We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.

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