Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

Details Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

2001-10-11

arxiv.org/abs/cond-mat/0110240v1

APL 81, 265 (2002)

Physics

Condensed Matter

Materials Science

5 pages, 4 figures

Scientific paper

10.1063/1.1491010

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.

Affiliated with

Also associated with

No associations

Rating

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-716328