Electrical spin injection and detection in an InAs quantum well

Details Electrical spin injection and detection in an InAs quantum well Electrical spin injection and detection in an InAs quantum well

2006-12-22

arxiv.org/abs/cond-mat/0612575v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring NiFe electrode. The observed spin diffusion length is 1.8 um at 20 K. The injected spin polarization across the NiFe/InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Our experimental results will contribute significantly to the realization of a practical spin field effect transistor.

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