Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

Details Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

2011-08-16

arxiv.org/abs/1108.3145v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

28 pages, 5 figures

Scientific paper

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.

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