Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

Details Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

2009-06-16

arxiv.org/abs/0906.2894v1

Physica B: Condensed Matter (2009) 404, 2890-2893

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, submitted to SCES08

Scientific paper

10.1016/j.physb.2009.07.041

We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2 single crystals with 0 <= x <= 0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes the antiferromagnetism. Consequently, the antiferromagnetic transition temperature increases upon Co substitution. For x = 0.07 Co content a subsequent low-temperature transition is observed in agreement with susceptibility measurements and results on YbRh2Si2 under hydrostatic pressure. Above the Neel transition the resistivity follows a non-Fermi liquid behavior similar to that of YbRh2Si2.

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