Electrical Resistivity of a Thin Metallic Film

Details Electrical Resistivity of a Thin Metallic Film Electrical Resistivity of a Thin Metallic Film

1999-11-06

arxiv.org/abs/cond-mat/9911093v1

Phys. Rev. B 60, 15782 (1999)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

20 pages. To be published in Physical Review B, December 15, 1999

Scientific paper

10.1103/PhysRevB.60.15782

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic Korringa-Kohn-Rostoker computation. The low-temperature resistivity is found to be zero for a free-standing film (reflecting boundary conditions) but nonzero when the film is sandwiched between two semi-infinite samples of the same material (outgoing boundary conditions). In the latter case, this resistivity scales inversely with the number of monolayers and is due to the background diffusive scattering by a finite lattice.

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