Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures

Details Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures

2010-06-07

arxiv.org/abs/1006.1163v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, submitted to Phys. Rev. Lett

Scientific paper

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the Hall voltage measured by pairs of ferromagnetic contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

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