Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

Details Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

2009-04-20

arxiv.org/abs/0904.2980v2

Appl. Phys. Lett. 94, 182105 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

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