Electrical detection of spin accumulation in a p-type GaAs quantum well

Details Electrical detection of spin accumulation in a p-type GaAs quantum well Electrical detection of spin accumulation in a p-type GaAs quantum well

2002-11-19

arxiv.org/abs/cond-mat/0211409v2

Physics

Condensed Matter

Materials Science

4 pages - 2 figues; one added note; some numbers corrected on page 1

Scientific paper

10.1103/PhysRevLett.90.166601

We report on experiments in which a spin-polarized current is injected from a $GaMnAs$ ferromagnetic electrode into a $GaAs$ quantum well through an AlAs barrier. The resulting spin polarization in the GaAs well is detected by measuring how the current, tunneling to a second $GaMnAs$ ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for the non-relaxed spin splitting of the chemical potential, that is spin accumulation, in the $GaAs$ well. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

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