Electrical control of spin coherence in ZnO

Details Electrical control of spin coherence in ZnO Electrical control of spin coherence in ZnO

2008-03-25

arxiv.org/abs/0803.3640v1

Physics

Condensed Matter

Materials Science

13 pages, 3 figures

Scientific paper

10.1063/1.2913049

Electric field enhanced electron spin coherence is characterized using time-resolved Faraday rotation spectroscopy in n-type ZnO epilayers grown by molecular beam epitaxy. An in-plane dc electric field E almost doubles the transverse spin lifetime at 20 K, without affecting the effective g-factor. This effect persists till high temperatures, but decreases with increasing carrier concentration. Comparisons of the variations in the spin lifetime, the carrier recombination lifetime and photoluminescence lifetimes indicate that the applied E enhances the radiative recombination rate. All observed effects are independent of crystal directionality and are performed at low magnetic fields (B < 0.2 T).

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