Electrical and magnetic transport properties of Fe3O4 thin films on GaAs (100) substrate

Details Electrical and magnetic transport properties of Fe3O4 thin films on GaAs (100) substrate Electrical and magnetic transport properties of Fe3O4 thin films on GaAs (100) substrate

2009-12-05

arxiv.org/abs/0912.0979v1

J. Phys.: Condens. Matter 19 486212 (2007);

Physics

Condensed Matter

Materials Science

16 pages, 5 figurs

Scientific paper

10.1088/0953-8984/19/48/486212

Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm the presence of single phase Fe3O4 in the film. The electrical transport property of the film shows the characteristic Verwey transition at 122 K and below 110 K, the transport follows variable range hopping type conduction mechanism. The film shows room temperature magnetization hysteresis loop suggesting the ferrimagnetic behavior of the film with saturation magnetization value close to 470 emu/cc.

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