Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Details Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28 Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

2012-02-07

arxiv.org/abs/1202.1560v2

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.

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