Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

Details Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

2005-07-14

arxiv.org/abs/cond-mat/0507318v2

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2182068

We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

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