Electric field tunability of nuclear and electronic spin dynamics due to the hyperfine interaction in semiconductor nanostructures

Details Electric field tunability of nuclear and electronic spin dynamics due to the hyperfine interaction in semiconductor nanostructures Electric field tunability of nuclear and electronic spin dynamics due to the hyperfine interaction in semiconductor nanostructures

2002-08-16

arxiv.org/abs/cond-mat/0208336v2

Phys. Rev. Lett. 90, 237601 (2003)

Physics

Condensed Matter

4 pages, 3 figures, revtex4

Scientific paper

10.1103/PhysRevLett.90.237601

We present formulas for the nuclear and electronic spin relaxation times due to the hyperfine interaction for nanostructed systems and show that the times depend on the square of the local density of electronic states at the nuclear position. A drastic sensitivity (orders of magnitude) of the electronic and nuclear spin coherence times to small electric fields is predicted for both uniformly distributed nuclear spins and for $\d$-doped layers of specific nuclei. This sensitivity is robust to nuclear spin diffusion.

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