Electric field switching in a resonant tunneling diode electroabsorption modulator

Details Electric field switching in a resonant tunneling diode electroabsorption modulator Electric field switching in a resonant tunneling diode electroabsorption modulator

2005-03-11

arxiv.org/abs/cond-mat/0503295v1

IEEE Journal of Quantum Electronics, 37, 12, pp. 1547-1552 (Dez. 2001).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages

Scientific paper

The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28 dB optical modulation in a 200 um active length device. The advantage of the RTD-EAM, over the conventional reversed biased pn junction EAM, is that the RTD-EAM has in essence an integrated electronic amplifier and therefore requires considerably less switching power.

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