Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

Details Electric field modulation of thermopower for transparent amorphous oxide thin film transistors Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

2010-09-28

arxiv.org/abs/1009.5548v1

Appl. Phys. Lett. 97, 182105 (2010)

Physics

Condensed Matter

Materials Science

10 pages, 4 figures

Scientific paper

To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

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