Electric-Field Modulation of Thermopower for the KTaO3 Field Effect Transistors

Details Electric-Field Modulation of Thermopower for the KTaO3 Field Effect Transistors Electric-Field Modulation of Thermopower for the KTaO3 Field Effect Transistors

2009-10-20

arxiv.org/abs/0910.3753v2

Appl. Phys. Express 2, 121103 (2009).

Physics

Condensed Matter

Strongly Correlated Electrons

13 pages, 4 figures

Scientific paper

10.1143/APEX.2.121103

We show herein fabrication and field-modulated thermopower for KTaO3 single-crystal based field-effect transistors (FETs). The KTaO3 FET exhibits field effect mobility of ~8 cm2/Vs, which is ~4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 microV/K by the application of gate electric field up to 1.5 MV/cm, ~400 microV/K below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.

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