Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots

Details Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots

2010-11-23

arxiv.org/abs/1011.5014v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.

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