Electric-Field-Induced Nuclear Spin Resonance Mediated by Oscillating Electron Spin Domains in GaAs-Based Semiconductors

Details Electric-Field-Induced Nuclear Spin Resonance Mediated by Oscillating Electron Spin Domains in GaAs-Based Semiconductors Electric-Field-Induced Nuclear Spin Resonance Mediated by Oscillating Electron Spin Domains in GaAs-Based Semiconductors

2008-08-05

arxiv.org/abs/0808.0538v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages

Scientific paper

10.1103/PhysRevLett.101.137602

We demonstrate an alternative nuclear spin resonance using radio frequency (RF) electric field (nuclear electric resonance: NER) instead of magnetic field. The NER is based on the electronic control of electron spins forming a domain structure. The RF electric field applied to a gate excites spatial oscillations of the domain walls and thus temporal oscillations of the hyperfine field to nuclear spins. The RF power and burst duration dependence of the NER spectrum provides insight into the interplay between nuclear spins and the oscillating domain walls.

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