Electric field induced charge injection or exhaustion in organic thin film transistor

Details Electric field induced charge injection or exhaustion in organic thin film transistor Electric field induced charge injection or exhaustion in organic thin film transistor

2004-11-18

arxiv.org/abs/cond-mat/0411467v1

Physics

Condensed Matter

Materials Science

4 figures, to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.71.035332

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends on the chemical species.

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