Physics – Condensed Matter – Materials Science
Scientific paper
2009-06-30
Physics
Condensed Matter
Materials Science
Accepted for Advanced Functional Materials
Scientific paper
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly ?read? by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.
Cario Laurent
Corraze Benoit
Cren Tristan
Debontridder Francois
Dubost Vincent
No associations
LandOfFree
Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-440687