Electric field effect on electron spin splitting in SiGe/Si quantum wells

Details Electric field effect on electron spin splitting in SiGe/Si quantum wells Electric field effect on electron spin splitting in SiGe/Si quantum wells

2007-12-12

arxiv.org/abs/0712.1955v2

Phys. Rev. B 77, 155328 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 3 figures

Scientific paper

10.1103/PhysRevB.77.155328

Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings oscillate as a function of the QW width due to inter-valley reflection of the electron wave off the interfaces. In accordance with the symmetry considerations additional electric-field-induced terms appear in the electron spin-dependent Hamiltonian. The oscillations of splitting are suppressed in rather low electric fields. The tight-binding calculations have been analyzed by using the envelope function approach extended to asymmetrical QWs.

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