Electric-field dependent spin diffusion and spin injection into semiconductors

Details Electric-field dependent spin diffusion and spin injection into semiconductors Electric-field dependent spin diffusion and spin injection into semiconductors

2002-01-23

arxiv.org/abs/cond-mat/0201425v1

Phys. Rev. B 66, 201202(R) (2002).

Physics

Condensed Matter

Materials Science

5 pages, 3 eps figures

Scientific paper

10.1103/PhysRevB.66.201202

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.

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