Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes

Details Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes

2005-10-07

arxiv.org/abs/cond-mat/0510158v1

Phys. Rev. Lett. 95, 236803 (2005)

Physics

Condensed Matter

Materials Science

to appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.95.236803

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 micron-ampere, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity saturation model with a saturation velocity of 2 x 10^7 cm/s.

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