Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

Details Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

2005-03-02

arxiv.org/abs/cond-mat/0503031v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.

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