Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

Details Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

2007-06-04

arxiv.org/abs/0706.0373v2

Appl. Phys. Lett. 91, 022107 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.2759264

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

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