Electric Field Control of Shallow Donor Impurities in Silicon

Details Electric Field Control of Shallow Donor Impurities in Silicon Electric Field Control of Shallow Donor Impurities in Silicon

2003-08-27

arxiv.org/abs/cond-mat/0308575v1

Phys. Rev. B 69, 085320 (2004)

Physics

Condensed Matter

18 pages, 6 figures, submitted to PRB

Scientific paper

10.1103/PhysRevB.69.085320

We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied electric field: donors near a barrier material and in the presence of an uniform electric field may undergo two different ionization regimes according to the distance of the impurity to the Si/barrier interface. We show that for impurities ~ 5 nm below the barrier, adiabatic ionization is possible within switching times of the order of one picosecond, while for impurities ~ 10 nm or more below the barrier, no adiabatic ionization may be carried out by an external uniform electric field. Our results are discussed in connection with proposed Si:P quantum computer architectures.

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