Electric field control of exchange bias in multiferroic epitaxial heterostructures

Details Electric field control of exchange bias in multiferroic epitaxial heterostructures Electric field control of exchange bias in multiferroic epitaxial heterostructures

2006-07-14

arxiv.org/abs/cond-mat/0607381v1

Physical Review Letters 97, 227201 (2006)

Physics

Condensed Matter

Strongly Correlated Electrons

15 pages, 5 figures, submitted

Scientific paper

10.1103/PhysRevLett.97.227201

The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying and controlling the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to pave the way towards a new generation of electric-field controlled spintronics devices.

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