Electric-field control of a hydrogenic donor's spin in a semiconductor

Details Electric-field control of a hydrogenic donor's spin in a semiconductor Electric-field control of a hydrogenic donor's spin in a semiconductor

2008-08-02

arxiv.org/abs/0808.0208v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.102.017603

An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.

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