Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

Details Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

1997-10-29

arxiv.org/abs/cond-mat/9710304v1

Physics

Condensed Matter

Materials Science

8 pages, 7 figures, revtex, epsf

Scientific paper

10.1103/PhysRevB.57.7190

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.

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