Efficient resistive memory effect on SrTiO3 by ionic-bombardment

Details Efficient resistive memory effect on SrTiO3 by ionic-bombardment Efficient resistive memory effect on SrTiO3 by ionic-bombardment

2011-06-06

arxiv.org/abs/1106.1203v1

Applied Physics Letters 99, 092105 (2011)

Physics

Condensed Matter

Materials Science

14 pages, 4 figures

Scientific paper

10.1063/1.3633114

SrTiO3 is known to exhibit resistive memory effect either with cation-doping or with high-temperature thermal reduction. Here, we add another scheme, ionic-bombardment, to the list of tools to create resistive memory effect on SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states, which is an order of magnitude larger than those achieved by the conventional thermal reduction process. One of the advantages of this new scheme is that it can be easily combined with lithographic processes to create spatially-selective memory effect.

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