Physics – Condensed Matter – Materials Science
Scientific paper
2001-10-02
Appl. Phys. Lett 80 (2002) 1240
Physics
Condensed Matter
Materials Science
14 pages including 3 figures, version accepted by Applied Physics Letters - A. Hanbicki, et al. Appl. Phys. Lett. 80 (7), p.TB
Scientific paper
10.1063/1.1449530
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.
Hanbicki Aubrey T.
Itskos G.
Jonker Berend T.
Kioseoglou George
Petrou Athos
No associations
LandOfFree
Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-474788