Efficient current-induced domain-wall displacement SrRuO3

Details Efficient current-induced domain-wall displacement SrRuO3 Efficient current-induced domain-wall displacement SrRuO3

2007-03-19

arxiv.org/abs/cond-mat/0703485v1

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1103/PhysRevLett.98.247204

We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10^9 - 10^10 A/m^2 is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width ~3 nm of domain walls in this compound.

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