Effects on Amorphous Silicon Photovoltaic Performance from High-temperature Annealing Pulses in Photovoltaic Thermal Hybrid Devices

Details Effects on Amorphous Silicon Photovoltaic Performance from High-temperature Annealing Pulses in Photovoltaic Thermal Hybrid Devices Effects on Amorphous Silicon Photovoltaic Performance from High-temperature Annealing Pulses in Photovoltaic Thermal Hybrid Devices

2012-03-06

arxiv.org/abs/1203.1216v1

Solar Energy Materials and Solar Cells, 100, pp. 199-203 (2012)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1016/j.solmat.2012.01.015

There is a renewed interest in photovoltaic solar thermal (PVT) hybrid systems, which harvest solar energy for heat and electricity. Typically, a main focus of a PVT system is to cool the photovoltaic (PV) cells to improve the electrical performance, however, this causes the thermal component to under-perform compared to a solar thermal collector. The low temperature coefficients of amorphous silicon (a-Si:H) allow for the PV cells to be operated at higher temperatures and are a potential candidate for a more symbiotic PVT system. The fundamental challenge of a-Si:H PV is light-induced degradation known as the Staebler-Wronski effect (SWE). Fortunately, SWE is reversible and the a-Si:H PV efficiency can be returned to its initial state if the cell is annealed. Thus an opportunity exists to deposit a-Si:H directly on the solar thermal absorber plate where the cells could reach the high temperatures required for annealing. In this study, this opportunity is explored experimentally. First a-Si:H PV cells were annealed for 1 hour at 100\degreeC on a 12 hour cycle and for the remaining time the cells were degraded at 50\degreeC in order to simulate stagnation of a PVT system for 1 hour once a day. It was found that, when comparing the cells after stabilization at normal 50\degreeC degradation, this annealing sequence resulted in a 10.6% energy gain when compared to a cell that was only degraded at 50\degreeC.

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