Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells

Details Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells

1998-08-10

arxiv.org/abs/cond-mat/9808098v2

Physics

Condensed Matter

Materials Science

RevTeX 10 pages, 9 figures

Scientific paper

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.

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