Physics – Condensed Matter – Materials Science
Scientific paper
2004-02-06
J. Phys.: Cond. Matter, 16, 1011, (2004)
Physics
Condensed Matter
Materials Science
15 pages, 15 figures. Accepted for Journal of Physics: Condensed Matter
Scientific paper
10.1088/0953-8984/16/7/001
We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.
Goan* Hsi-Sheng
Hollenberg Lloyd C. L.
Kettle L. M.
Smith Sean C.
Wellard Cameron J.
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