Physics – Condensed Matter – Materials Science
Scientific paper
2011-10-18
Appl. Phys. Lett. 100, 103502 (2012)
Physics
Condensed Matter
Materials Science
5 figures
Scientific paper
10.1063/1.3692174
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.
Boykin Timothy
Jiang Zhengping
Kharche Neerav
Klimeck Gerhard
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