Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport

Details Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport

2003-03-14

arxiv.org/abs/cond-mat/0303282v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 figures, 1 table

Scientific paper

10.1103/PhysRevB.68.085307

A non-equilibrium Green's function method is applied to model high-field quantum transport and electron-phonon resonances in semiconductor superlattices. The field-dependent density of states for elastic (impurity) scattering is found non-perturbatively in an approach which can be applied to both high and low electric fields. I-V curves, and specifically electron-phonon resonances, are calculated by treating the inelastic (LO phonon) scattering perturbatively. Calculations show how strong impurity scattering suppresses the electron-phonon resonance peaks in I-V curves, and their detailed sensitivity to the size, strength and concentration of impurities.

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